丝印：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON)

文件：401.18 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：12N100；Package：SOP-8；N-Channel Super Trench Power MOSFET

Description The RM12N100S8 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：371.48 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：12N10AT；Package：DFN5X6；100V N-Channel DTMOS

文件：676.33 Kbytes 页数：7 Pages

WUMC

紫光国微

Planar Power MOSFET  (N-CH)

UTC

友顺

Trench Mosfet

GOFORD

谷峰半导体