丝印：12M2H078；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 21 A at TC = 100°C • RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.3019 Mbytes 页数：17 Pages

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丝印：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 15 A at TC = 100°C • RDS(on) = 115.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against para

文件：1.29119 Mbytes 页数：17 Pages

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丝印：12M2H181；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 10.5 A at TC = 100°C • RDS(on) = 181.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against pa

文件：1.27948 Mbytes 页数：17 Pages

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丝印：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 6.2 A at TC = 100°C • RDS(on) = 233.9 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against par

文件：1.22702 Mbytes 页数：17 Pages

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丝印：12M2H007；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 181 A at TC = 100°C • RDS(on) = 7.5 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.2487 Mbytes 页数：17 Pages

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丝印：12M2H010；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 138 A at TC = 100°C • RDS(on) = 10 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasi

文件：1.29737 Mbytes 页数：17 Pages

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丝印：12M2H017；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 84 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.26773 Mbytes 页数：17 Pages

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丝印：12M2H026；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 58 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.24259 Mbytes 页数：17 Pages

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丝印：12M2H034；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 45 A at TC = 100°C • RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.27017 Mbytes 页数：17 Pages

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丝印：12M2H040；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 39 A at TC = 100°C • RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.25735 Mbytes 页数：17 Pages

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