11A, 500V  N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC 11NM50 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converters for power applications. RDS(ON) < 0.32Ω @ VGS=10V, ID=5.5AHigh switching Speed100% avalanche testedImproved dv/dt capability;

UTC

友顺

N-Channel 650 V (D-S) MOSFET

文件：1.03267 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：675.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.4 廓, 8.5 A MDmesh??II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：663.06 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：675.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体