P11NM50N中文资料PDF规格书
P11NM50N规格书详情
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
0501+ |
TO-220F |
70 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
ST |
23+ |
TO220 |
1861 |
专业优势供应 |
询价 | ||
ST |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ST |
22+ |
TO-220 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
ST/意法 |
23+ |
NA/ |
3320 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
TO-220 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |
