丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

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Keystone Electronics

包装：盒 类别：开发板，套件，编程器 评估板 - 传感器 描述：BOARD ACCEL/COMPASS 3AXIS LSM303

ADAFRUIT

包装：袋 类别：五金件，紧固件，配件 旋钮 描述：KNOB FLUTED W/SKIRT 0.250\

Davies Molding, LLC