STL11N60M2-EP

Marking：11N60M2E；Package：PowerFLAT；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™ M2enhan

STL11N65M5

Marking：11N65M5；Package：PowerFLAT；N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package

Description ThisdeviceisanN-channelPowerMOSFET basedonMDmesh™M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH™horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhighpo

STLD110N10F7

Marking：110；Package：PowerFLAT；N-channel 100 V, 5 mΩ typ., 107 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 dual side cooling package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhancedtrenchg

STP110N7F6

Marking：110N7F6；Package：TO-220；N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Th

SVS11N65FJHD2

Marking：11N65FJHD2；Package：TO-220FJH-3L；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS11N65FJHD2isanN-channelenhancementmodehighvoltage powerMOSFETsproducedusingSilan’sSuperJunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerde

SVS11N65FJHD2

Marking：11N65FJHD2；Package：TO-220FJH-3L；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS11N65FJHD2isanN-channelenhancementmodehighvoltage powerMOSFETsproducedusingSilan’sSuperJunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerde

SZ1110A

Marking：11Z；1.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 1.0WPowerDissipation 3.3V–330VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

SZF1110A

Marking：11Z；Package：SOD-123FL；1W Silicon Planar Zener Diodes

Features Glasspassivatedchip Built-instrainrelief Lowinductance Highpeakreversepowerdissipation Lowreverseleakage Foruseinstabilizingandclipping withhighpowerrating RoHScompliant

TCAN1164DMTRQ1

Marking：1164；Package：VSON；TCAN1164-Q1 Automotive CAN FD System Basis Chip with LDO Output and Watchdog

1Features •AECQ100(Grade1)Qualifiedforautomotive applications •MeetstherequirementsofISO11898-2:2016 •FunctionalSafetyQuality-Managed –Documentationavailabletoaidinfunctional safetysystemdesign •Wideinputoperationalvoltagerange •IntegratedLDOforCANtransce

TCAN1164TDMTRQ1

Marking：1164T；Package：VSON；TCAN1164-Q1 Automotive CAN FD System Basis Chip with LDO Output and Watchdog

1Features •AECQ100(Grade1)Qualifiedforautomotive applications •MeetstherequirementsofISO11898-2:2016 •FunctionalSafetyQuality-Managed –Documentationavailabletoaidinfunctional safetysystemdesign •Wideinputoperationalvoltagerange •IntegratedLDOforCANtransce