PESD5V0S1BLD-Q

Marking：1100；Package：DFN1006D-2；Bidirectional ESD protection diode

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. ThedeviceishousedinaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plastic packagewithvisibleandsolde

PESD5V0X1ULD

Marking：1111；Package：SOD882D；Ultra low capacitance unidirectional ESD protection diode

1.Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients. ThedeviceishousedinaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plastic package

PESD5V0X1ULD-Q

Marking：1111；Package：DFN1006D-2；Ultra low capacitance unidirectional ESD protection diode

1.Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients. ThedeviceishousedinaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plastic package

PESD6V0L2UU

Marking：11X；Package：SOT323；Low Capactionce 2-Line Uni-directional ESD protection

Features @Ultralowcapacitance:0.35pFtypical(10To10) ©Ultralowleakage:nAlevel ®Lowoperatingvoltage:6. ®Lowclampingvoltage ®2-pinleadlesspackage ®Complieswithfollowingstandards: ®—IEC61000-4-2(ESD)immunitytest Airdischarge:£20kV' Contactdisc

PESD8V0S1ULD

Marking：1111；Package：SOD882D；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PESD8V0S1ULD-Q

Marking：1111；Package：DFN1006D-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PMEG3002AELD

Marking：1101；Package：SOD882D；30 V, 0.2 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

PSMN011-100YSF

Marking：11FS10Y；Package：SOT669；NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package

1.Generaldescription NextPower100VstandardlevelgatedriveMOSFET.Qualifiedto175°Candrecommendedfor industrial&consumerapplications. 2.Featuresandbenefits •LowQrrforhigherefficiencyandlowerspiking •Qualifiedto175°C •LowQGxRDSonFOMforhighefficiencyswitch

PSMN011-60HL

Marking：11RL60H；Package：LFPAK56D；N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DuallogiclevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Applica

PTZ11B

Marking：11B；Package：SOD-106；Zener diode

Features 1)Smallpowermoldtype.(PMDS) 2)HighESDtolerance Applications Voltageregulation