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10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
BRG10N120D	文件：770.08 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
HGTG10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HM10N120T	文件：1.25182 Mbytes Page：8 Pages	1200V/10ATrenchFieldStopIGBT	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
MPCK10N120A	文件：329.45 Kbytes Page：5 Pages	ZeroReverseRecoveryCurrent Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives 	FS First Silicon Co., Ltd	FS
SCT10N120	文件：791.79 Kbytes Page：14 Pages	HighvoltageDC-DCconverters	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
SCT10N120AG	文件：238.62 Kbytes Page：14 Pages	Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package Features •AEC-Q101qualified •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Motordrives •EVchargers •HighvoltageDC-DCconverters •Swi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
SGH10N120RUF	文件：456.93 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH10N120RUFD	文件：511.24 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
UG10N120	文件：153.29 Kbytes Page：3 Pages	NPTSERIESN-CHANNELIGBT	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	10n120直插晶振	FAIRCHILD/仙童	24+	TO 220	154942	明嘉莱只做原装正品现货	询价
深圳兆威电子有限公司	10N15	VB	2019	SOP-8	55000	绝对原装正品假一罚十!	询价
深圳市安富世纪电子有限公司	10N15	国产	21+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市智创诚芯电子科技有限公司	10N15	国产	22+	TO-252	25000	原装现货,价格优惠,假一罚十	询价
深圳市威雅利发展有限公司	10N15	国产	20+	TO-252	10	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
柒号芯城电子商务(深圳)有限公司	10N15	国产	2023+	TO-252	700000	柒号芯城跟原厂的距离只有0.07公分	询价
天津市博通航睿技术有限公司	10N15	国产	20+	TO-252	110	全新原装实单必成	询价
深圳市共奕科技有限公司	10N15	Rongtai(容泰半导体)	1年内	TO-220C	1883	容泰经销商共奕芯城一站式电子元器采购平台支持自助	询价
深圳市创新迹电子有限公司	10N15	U	2023+	SOP-8	8700	原装现货	询价
深圳市九方航科技有限公司	10N15	VBSEMI	19+	SOP-8	29600	绝对原装现货,价格优势!	询价

更多10N120直插晶振供应商更新时间2024-5-17 16:06:00

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