丝印：100N03；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

文件：2.87106 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：100N03；Package：TO-252-4R；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features  30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100 UIS TESTED! 100 ΔVds TEST

文件：2.09987 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：100N03A；Package：TO-252；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：910.69 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：100N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：390.79 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：100N03；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

文件：2.87106 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：100N03A；Package：TO-252；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：910.69 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

文件：968.88 Kbytes 页数：3 Pages

EVVOSEMI

翊欧

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：1.62203 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

90A竊?0V N-CHANNEL MOSFET

文件：212.13 Kbytes 页数：5 Pages

KIA

可易亚半导体