丝印：100N120AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitance Applications • Traction inverters • DC-DC converters • Solar inverters • OBC Description This silicon carbide Power MOSFET device has been developed using S

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STMICROELECTRONICS

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