NVMFWS0D7N04XMT1G

Marking：0D7N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •B

NVMFWS0D9N04XMT1G

Marking：0D9N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •MotorDrive •Ba

NVMJS0D8N04CLTWG

Marking：0D8N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS0D9N04CLTWG

Marking：0D9N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

NVMJS0D9N04CTWG

Marking：0D9N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

NVMJST0D9N04CTXG

Marking：0D94C；Package：TCPAK10；MOSFET – Power, Single N-Channel 40 V, 1.07 m, 531 A

Features •SmallFootprint(5x7mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TCPAK57TopCoolPackage(TCPAK10) •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMTS0D4N04CLTXG

Marking：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant TypicalApplications •Powe

NVMTS0D4N04CTXG

Marking：0D4N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •Power88Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCo

NVMTS0D6N04CLTXG

Marking：0D6N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.42 m, 554.5 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankPlatedforEnhancedOpticalInspection •AEC−101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFre

NVMTS0D6N04CTXG

Marking：0D6N04C；Package：DFNW8；MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankPlatedforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFr