NTMFS0D5N04XLT1G

Marking：0D5N4L；Package：DFNW5；MOSFET - Power, Single N-Channel, Logic Level, SO-8FL 40 V, 0.49 m, 455 A

Features •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltageSpike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant TypicalApplications •HighSwitc

NTMFS0D7N04XL

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTMFS0D7N04XLT1G

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTMFS0D7N04XMT1G

Marking：0D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing

NTMFS0D9N04XLT1G

Marking：0D9N4L；Package：DFN5；MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTTFSSCH0D7N02X

Marking：0D7；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •UltraLowRDS(on)toImproveSystemEfficiency •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeand

NTTFSSH0D7N02X

Marking：0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features AdvancedSource−DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction UltraLowRDS(on)toImproveSystemEfficiency LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Ap

NVMFWS0D4N04XMT1G

Marking：0D4N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.42 m, 512 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Bat

NVMFWS0D5N04XMT1G

Marking：0D5N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •B

NVMFWS0D6N04XMT1G

Marking：0D6N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Bat