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NTMFS0D5N04XLT1G

Marking:0D5N4L;Package:DFNW5;MOSFET - Power, Single N-Channel, Logic Level, SO-8FL 40 V, 0.49 m, 455 A

Features •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltageSpike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant TypicalApplications •HighSwitc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMFS0D7N04XL

Marking:0D7N4L;Package:DFN5;MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMFS0D7N04XLT1G

Marking:0D7N4L;Package:DFN5;MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMFS0D7N04XMT1G

Marking:0D7N4;Package:DFN5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMFS0D9N04XLT1G

Marking:0D9N4L;Package:DFN5;MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFSSCH0D7N02X

Marking:0D7;Package:WDFN9;MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •UltraLowRDS(on)toImproveSystemEfficiency •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeand

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFSSH0D7N02X

Marking:0D7N02;Package:WDFN9;MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features AdvancedSource−DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction UltraLowRDS(on)toImproveSystemEfficiency LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Ap

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFWS0D4N04XMT1G

Marking:0D4N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.42 m, 512 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Bat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFWS0D5N04XMT1G

Marking:0D5N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •B

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFWS0D6N04XMT1G

Marking:0D6N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Bat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    0D

  • 制造商:

    The Bergquist Company

  • 功能描述:

    GPAD VO 0.020IN/0.508MM 1.900 IN BY 1.400 IN

供应商型号品牌批号封装库存备注价格
0805
63200
询价
NA
NA
NA
2885
原装/现货
询价
YAGEO
21+
10000
原装公司现货
询价
YAGEO
25
2073
原装正品
询价
UNI-ROYAL
2410+
NA
6680
优势代理渠道,原装现货,可全系列订货
询价
ZX
2022+
7600
原厂原装,假一罚十
询价
JDSU/AVANEX/SANTEC
2447
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
1*3 180度*0.08
报0.2
0
原装现货价格有优势量大可以发货
询价
JRC/新日本无线
23+
SSOP14
50000
全新原装正品现货,支持订货
询价
JRC/新日本无线
08+
SSOP14
1000
进口原装现货假一赔万力挺实单
询价
更多0D供应商 更新时间2025-7-6 8:01:00