丝印：070；WE-CST Current Sense Transformer

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：390.63 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：0702LS；Package：PG-TDSON-8；OptiMOS™ Power-Transistor, 60 V

Features • Ideal for high-frequency switching • Optimized for chargers • 100 avalanche tested • Superior thermal resistance • N-channel, Logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.70376 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：070N10NS；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：440.06 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：070N10N5；Package：PG-TDSON-8；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22192 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：070N；Package：WDFN6；MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：070W120G3AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

文件：506.56 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：070N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF070N04M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.89434 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：070N10L5；Package：PG-TDSON-8；OptiMOSTM5 Power-Transistor, 100 V

文件：1.08135 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：070N10SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V

文件：991.58 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：0702NL；Package：PG-TDSON-8；OptiMOSTM5 Power-Transistor, 60 V

文件：1.21459 Mbytes 页数：11 Pages

Infineon

英飞凌