丝印：0702LS；Package：PG-TDSON-8；OptiMOS™ Power-Transistor, 60 V

Features • Ideal for high-frequency switching • Optimized for chargers • 100 avalanche tested • Superior thermal resistance • N-channel, Logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.70376 Mbytes 页数：13 Pages

INFINEON

英飞凌

OptiMOS ™低压功率 MOSFET - 完美满足充电器和适配器设计的需求

·Ideal for high-frequency switching\r\n·Optimized for chargers\r\n·100% avalanche tested\r\n·Superior thermal resistance\r\n·N-channel,Logic level\r\n·Pb-free lead plating;RoHS compliant\r\n·Halogen-free according to IEC61249-2-21\r\n·Qualified for Standard Grade applications;

Infineon

英飞凌

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

文件：32.659 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS= 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Appl

文件：476.33 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs????

文件：73.76 Kbytes 页数：2 Pages

SUTEX