丝印：065N06T；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

文件：509.87 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：065N03L；Package：PG-TSDSON-8；n-Channel Power MOSFET

Features • Optimized for high performance buck converters (Server, VGA) • 100 avalanche tested • Very low on-resistance RDS(on) @ VGS=4.5V • Excellent gate charge x RDS(on) product (FOM) • Very low FOMQOSS for high frequency SMPS • Very low FOMSW for high frequency SMPS • Qualified accordin

文件：1.42018 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：065N10N；Package：TO-263；100 V N-Channel MOSFET

Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：884.2 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：06510N5；Package：PG-TSON-8-4；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.44088 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：06510C5；Package：PG-TTFN-9-1；OptiMOSTM 5 Power-Transistor, 100 V

Features • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.46526 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：06506；Package：TO-220F；650V/6A Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Wit

文件：1.59616 Mbytes 页数：5 Pages

RECTRON

丽正

丝印：065N06LS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

文件：1.11577 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：06503；Package：TO-220-2pin；650V/3ASiliconCarbidePowerSchottkyBarrierDiode

文件：335.54 Kbytes 页数：5 Pages

RECTRON

丽正

丝印：06503；Package：TO-220F；650V/3ASiliconCarbidePowerSchottkyBarrierDiode

文件：284.75 Kbytes 页数：6 Pages

RECTRON

丽正

丝印：06504；Package：TO-220-2pin；650V4A Silicon Carbide Power Schottky Barrier Diode

文件：314.44 Kbytes 页数：5 Pages

RECTRON

丽正