IQE065N10NM5CG

丝印：06510C5；Package：PG-TTFN-9-1；OptiMOSTM 5 Power-Transistor, 100 V

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQE065N10NM5CGSC

丝印：S；Package：PG-WHTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •OptimizedforhighperformanceSMPS,e.g.syncronousrectification •N-channel •100avalanchetested •Superiorthermalresistance •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQE065N10NM5CGSC

OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

\n优势:\n• Enabling highest power density and performance\n• Superior thermal performance\n• Optimized layout possibilities for efficient use of real-estate\n• Simplifying parallel configuration of multiple MOSFETs with center-gate footprint\n• Improved PCB losses\n• Reduced parasitics\n;

IQE065N10NM5SC

MOSFETOptiMOSTM5Power-Transistor,100V

Features •OptimizedforhighperformanceSMPS,e.g.syncronousrectification •N-channel •100avalanchetested •Superiorthermalresistance •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQS211-00000000-TSR

AZOTEQ
SOT23-6