丝印：060；WE-CST Current Sense Transformer

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：390.66 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：060P03；Package：PDFN5x6-8L；MOSFET

Features - Super low gate charge. - Advanced high cell density trench technology. - Excellent Cdv/dt effect decline. - AEC-Q101 Qualified.

文件：648.54 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：060N10NS；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：420.02 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：060N06N；Package：PG-TO220-FP；OptiMOSTM Power-Transistor, 60 V

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.66755 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：060N06N；Package：PG-TO220-FP；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.33129 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：0604NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Optimized for high performance SMPS, e.g. synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.22255 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：0605NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Optimized for high performance SMPS, e.g. synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.2949 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：060N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.33628 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：06065TDW；Package：TO-252；SILICON CARBIDE SCHOTTKY DIODE

FEATURES • Positive temperature coefficient for safe operation and easy of paralleling • 175°C maximum operating junction temperature • Essentially no reverse or forward recovery • Extremely fast switching not dependent on temperature • Qualified according to AEC-Q101 Rev_D • Lead-Free Fini

文件：820.9 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：0603NAB；Package：SOT669；60 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：302.93 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司