060

型号：749252060；WE-CST Current Sense Transformer

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

060P03

型号：ACMS71P03H8-HF；Package：PDFN5x6-8L；MOSFET

Features -Superlowgatecharge. -Advancedhighcelldensitytrenchtechnology. -ExcellentCdv/dteffectdecline. -AEC-Q101Qualified.

060N10NS

型号：BSC060N10NS3G；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features •Verylowgatechargeforhighfrequencyapplications •Optimizedfordc-dcconversion •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Qualifiedac

060N06N

型号：IPA060N06N；Package：PG-TO220-FP；OptiMOSTM Power-Transistor, 60 V

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

060N06N

型号：IPA060N06N；Package：PG-TO220-FP；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

0604NLS

型号：ISC0604NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

0605NLS

型号：ISC0605NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

060N10N6

型号：ISC060N10NM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

06065TDW

型号：LSC06065TDW；Package：TO-252；SILICON CARBIDE SCHOTTKY DIODE

FEATURES •Positivetemperaturecoefficientforsafeoperationandeasyof paralleling •175°Cmaximumoperatingjunctiontemperature •Essentiallynoreverseorforwardrecovery •Extremelyfastswitchingnotdependentontemperature •QualifiedaccordingtoAEC-Q101Rev_D •Lead-FreeFini

0603NAB

型号：PHPT60603NY-Q；Package：SOT669；60 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60603PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin