丝印：029N06NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.038369 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：029N15N6；Package：PG-TO263-3；OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：727.11 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：029N04NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：908.94 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：029N15N6；Package：PG-TO220-3；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：898.61 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：029N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.25445 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：029N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 29 m, 22 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：029N08H；Package：LFPAK33；MOSFET ??Power, Single N-Channel 80 V, 32.4 m, 21 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.3 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：029A；Package：SOT-23；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.1656 Mbytes 页数：49 Pages

TI

德州仪器

丝印：029A；Package：SOT-23；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.16676 Mbytes 页数：49 Pages

TI

德州仪器

丝印：029A；Package：SOT-23(DBZ)；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.24829 Mbytes 页数：52 Pages

TI

德州仪器