Special terminal, special connections, Clamping yoke, Busbar

文件：58.31 Kbytes 页数：2 Pages

WEIDMULLER

魏德米勒

丝印：026BI01L；Package：SOIC；Low Skew, 1-to-2 Differential-to-LVCMOS/LVTTL Fanout Buffer

FEATURES • Two LVCMOS / LVTTL outputs • Differential CLK, nCLK input pair • CLK, nCLK pair can accept the following differential input levels: LVPECL, LVDS, LVHSTL, HCSL, SSTL • Maximum output frequency: 350MHz • Output skew: 15ps (maximum) • Part-to-part skew: 600ps (maximum) • Additive p

文件：372.16 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：026BI01L；Package：SOIC；Low Skew, 1-to-2 Differential-to-LVCMOS/LVTTL Fanout Buffer

FEATURES • Two LVCMOS / LVTTL outputs • Differential CLK, nCLK input pair • CLK, nCLK pair can accept the following differential input levels: LVPECL, LVDS, LVHSTL, HCSL, SSTL • Maximum output frequency: 350MHz • Output skew: 15ps (maximum) • Part-to-part skew: 600ps (maximum) • Additive p

文件：372.16 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：026N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：960.61 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：026N15N6；Package：PG-TO263-7；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.01369 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：026N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：994.22 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：026N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06267 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：026N12N6；Package：PG-HSOF-8；OptiMOS™ 6 Power ‑Transistor, 120 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x R product (FOM) DS(on) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead platin

文件：1.17186 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：026N12N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and Top side cooling • Pb-free

文件：1.46154 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：026BI01L；Package：SOIC；Differential-to-LVCMOS/LVTTL Fanout Buffer

文件：176.4 Kbytes 页数：15 Pages

IDT