224/225 Series Lead-Free 2AG, Fast-Acting

文件：213.51 Kbytes 页数：4 Pages

LITTELFUSE

力特

丝印：022N12N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.14854 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：022N12N6；Package：PG-TO220-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.68825 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：022N10NS；Package：PG-HSOF-8；MOSFET StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.19444 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：022N6L5；Package：PG-TSON-8；OptiMOSTM 5 Power-Transistor, 60 V

Features • Optimized for high performance SMPS, e.g. synchronous rectification • N-channel, logic level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.12381 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：022N6C5；Package：PG-TTFN-9；OptiMOSTM 5 Power-Transistor, 60 V

Features • Optimized for high performance SMPS, e.g. synchronous rectification • N-channel, logic level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.15816 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：022N1N6；Package：PG-TSON-8-3；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：904.61 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：022N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 21 m, 25 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0222；Package：VSON；1.6-A, 1.25-MHz BUCK CONVERTER IN A 3 mm ´ 3 mm SON PACKAGE

FEATURES · Input Voltage Range 4.5 VDC to 8 VDC · Output Voltage (0.8 V to 90% VIN) · 0 A to 1.6 A Current Capability · Fixed 1.25-MHz Switching Frequency · Reference 0.8 V ±1% · Internal 250 mW N-Channel MOSFET Switch · Current Mode Control with Internal Slope Compensation · Inte

文件：593.42 Kbytes 页数：28 Pages

TI

德州仪器

丝印：0222；Package：VSON；1.6-A, 1.25-MHz BUCK CONVERTER IN A 3 mm ´ 3 mm SON PACKAGE

FEATURES · Input Voltage Range 4.5 VDC to 8 VDC · Output Voltage (0.8 V to 90% VIN) · 0 A to 1.6 A Current Capability · Fixed 1.25-MHz Switching Frequency · Reference 0.8 V ±1% · Internal 250 mW N-Channel MOSFET Switch · Current Mode Control with Internal Slope Compensation · Inte

文件：593.42 Kbytes 页数：28 Pages

TI

德州仪器