丝印：016N10TH；Package：TOLL；MOSFET

Features - Ultra-low on-resistance and gate-charge. - AEC-Q101 Qualified. - Advanced shielded-gate technology.

文件：683.89 Kbytes 页数：7 Pages

COMCHIP

典琦

丝印：016N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avala

文件：393.08 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：016N06SC；Package：PG-WSON-8-2；OptiMOSTM Power-MOSFET, 60 V

Features • Double side cooled package-with lowest Juntion-top thermal resistance • 175°C rated • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • High

文件：997.37 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：016N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：937.13 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：016N06NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04978 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：016N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：963.58 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：016N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：852.74 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：016N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.05247 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：01608N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 80 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.23146 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：01608NC；Package：PG-TTFN-9；OptiMOSTM 5 Power-Transistor, 80 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.12125 Mbytes 页数：11 Pages

INFINEON

英飞凌