丝印：015N10N5；Package：PG-TO263-7；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.09765 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：015N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：992.27 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：015N10NS；Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：989.32 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：015N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.49247 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：015N06LF；Package：PG-TDSON-8-FL；OptiMOSTM 5 Linear FET, 60 V

Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.36138 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：015N06N5；Package：sTOLL；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features • Optimized for low voltage motor drives application • Optimized for battery powered applications • Enables automated optical solder inspection • 100 avalanche tested • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant

文件：892.63 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：256.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：255.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：015N10NS；Package：TOLL；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

文件：1.037869 Mbytes 页数：6 Pages

PANJIT

強茂

丝印：015W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

文件：499.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体