丝印：012N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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