首页 >NP82N055CLE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP82N055CLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP82N055CLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) •Highcurrentrating ID(DC)=±82A •Low | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
NP82N055CLE
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
23+ |
N/A |
49100 |
正品授权货源可靠 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-220AB |
询价 | ||
NEC |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
2023+ |
TO-220AB |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TECCOR/LITT |
23+ |
TO-251 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEC |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NEC |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
NEC |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
TO-220 |
350 |
国产品牌isc,可替代原装 |
询价 |
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相关库存
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- NP84N055DHE-S12-AY
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