首页 >NP84N04EHE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP84N04EHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP84N04EHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP84N04EHE
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 84A I(D) | TO-263AB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
询价 | ||
NEC |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
NEC |
21+ |
SOT-263 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
SOT-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
250 |
国产品牌isc,可替代原装 |
询价 | ||
NEC |
23+ |
NA/ |
1715 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NEC |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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