| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP84N03KUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentapplications. FEATURES •Channeltemperature175degreerating •Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=42A) •LowCiss:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
NP84
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 84A I(D) | TO-220AB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-220AB |
询价 | ||
NEC |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
JINGDAO/晶导微 |
23+ |
SMA(DO-214AC) |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEC |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NEC |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
NEC |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
TO-220 |
250 |
国产品牌isc,可替代原装 |
询价 | ||
NEC |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
更多- NP84N04CHE-S12-AZ
- NP84N04DHE-S12-AY
- NP84N04EHE-E1-AY
- NP84N04KHE
- NP84N04KHE-E2-AY
- NP84N04MHE-S18-AY
- NP84N04NHE-S18-AY
- NP84N055CHE-S12-AZ
- NP84N055CLE-S12-AZ
- NP84N055DHE-S12-AY
- NP84N055DLE-S12-AY
- NP84N055EHE-E1-AY
- NP84N055ELE
- NP84N055ELE-E2-AY
- NP84N055KHE-E1
- NP84N055KHE-E2-AY
- NP84N055KLE-E1-AY
- NP84N055MHE
- NP84N055MLE
- NP84N055NHE
- NP84N055NLE
- NP84N075CUE
- NP84N075DUE
- NP84N075EUE
- NP84N075EUE-E2-AY
- NP84N075KUE-E1-AY
- NP84N075MUE
- NP84N075NUE
- NP84W
- NP866B
- NP86N04CHE-S12-AZ
- NP86N04DHE-S12-AY
- NP86N04EHE-E1-AY
- NP86N04KHE
- NP86N04KHE-E2-AY
- NP86N04MHE-S18-AY
- NP86N04NHE-S18-AY
- NP88N03KUG-E1
- NP88N03KUG-E1-AZ
- NP88N04CHE-S12-AZ
- NP88N04DHE-S12-AY
- NP88N04EHE-E1-AY
- NP88N04KHE
- NP88N04KHE-E1-AY
- NP88N04KUG-E1
相关库存
更多- NP84N04DHE
- NP84N04EHE
- NP84N04EHE-E2-AY
- NP84N04KHE-E1-AY
- NP84N04MHE
- NP84N04NHE
- NP84N055CHE
- NP84N055CLE
- NP84N055DHE
- NP84N055DLE
- NP84N055EHE
- NP84N055EHE-E2-AY
- NP84N055ELE-E1-AY
- NP84N055KHE
- NP84N055KHE-E1-AY
- NP84N055KLE
- NP84N055KLE-E2-AY
- NP84N055MHE-S18-AY
- NP84N055MLE-S18-AY
- NP84N055NHE-S18-AY
- NP84N055NLE-S18-AY
- NP84N075CUE-S12-AZ
- NP84N075DUE-S12-AY
- NP84N075EUE-E1-AY
- NP84N075KUE
- NP84N075KUE-E2-AY
- NP84N075MUE-S18-AY
- NP84N075NUE-S18-AY
- NP865B
- NP86N04CHE
- NP86N04DHE
- NP86N04EHE
- NP86N04EHE-E2-AY
- NP86N04KHE-E1-AY
- NP86N04MHE
- NP86N04NHE
- NP88N03KDG-E1-AY
- NP88N03KUG-E1-AY
- NP88N04CHE
- NP88N04DHE
- NP88N04EHE
- NP88N04EHE-E2-AY
- NP88N04KHE-E1
- NP88N04KHE-E2-AY
- NP88N04KUG-E1-AY
