首页 >NP84N055DHE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP84N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP84N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
NP84N055DHE
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 84A I(D) | TO-262AA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08+(pbfree) |
TO-262 |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-262 |
询价 | ||
NEC |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
isc |
2024 |
I2PAK/TO-262 |
150 |
国产品牌isc,可替代原装 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
21+ |
SOT-263 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
NEC |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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