NP84N055DHE规格书供应商报价瑞萨RENESAS-114ic电子网

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NP84N055DHE	文件：219.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NP84N055DHE	文件：306.34 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055DHE	文件：242.42 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP84N055DHE-S12-AY	文件：219.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NP84N055DHE-S12-AY	文件：306.34 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055DHE-S12-AYNote1,	文件：306.92 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055DLE	文件：243.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP84N055DLE	文件：429.84 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055DLE	文件：224.36 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NP84N055EHE	文件：219.92 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NP84N055EHE	文件：306.34 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055EHE	文件：306.45 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP84N055ELE	文件：307.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP84N055ELE	文件：429.84 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055ELE	文件：224.36 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NP84N055KHE	文件：219.92 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NP84N055KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055KHE	文件：306.34 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NP84N055KHE	文件：306.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP84N055KLE	文件：307.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
NP84N055DHE
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 84A I(D) | TO-262AA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	NP84N055DHE	NEC	24+	TO-262	8866		询价
深圳市近平电子有限公司	NP84N055DHE	NEC	6000	面议	19	TO-262	询价
深圳兆威电子有限公司	NP84N055DHE	NEC	23+	TO-262	90000	只做原厂渠道价格优势可提供技术支持	询价
京海半导体(深圳)有限公司	NP84N055EHE	NEC	21+	SOT-263	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	NP84N055EHE	NEC	TO-263	22+	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	NP84N055EHE	NEC	23+	TO-263	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	NP84N055EHE	NEC	22+	TO-263	25000	只做原装进口现货,专注配单	询价
深圳市宏捷佳电子科技有限公司	NP84N055EHE	NEC	24+	TO-263	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市威尔健半导体有限公司	NP84N055ELE	FAIRCHILD/仙童	23+	TO-251(IPAK)	69820	终端可以免费供样,支持BOM配单!	询价
深圳市国宇半导体科技有限公司	NP84N055ELE	NEC	23+	TO-263	10000	公司只做原装正品	询价

更多NP84N055DHE供应商更新时间2024-10-31 15:30:00

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