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NP83P04PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=−10V,ID=−41.5A) RDS(on)2=8.0mΩMAX.(VGS=−4.5V,ID=−41.5A) •Highcurrentrating:I

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP83P04PDG

Product Scout Automotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP83P04PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=−10V,ID=−41.5A) RDS(on)2=8.0mΩMAX.(VGS=−4.5V,ID=−41.5A) •Highcurrentrating:I

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP83P04PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=−10V,ID=−41.5A) RDS(on)2=8.0mΩMAX.(VGS=−4.5V,ID=−41.5A) •Highcurrentrating:I

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP83P04PDG_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP83P04PDG-E1-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP83P04PDG-E2-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    NP83P04PDG

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
NEC
23+
TO-252
35400
全新原装真实库存含13点增值税票!
询价
08+(pbfree)
8866
询价
Renesas
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
NEC
6000
面议
19
TO-252
询价
NEC
2020+
TO-263
32630
公司代理品牌,原装现货超低价清仓!
询价
RENESAS/瑞萨
17+
TO-263
156
全新原装正品现货
询价
RENESAS/瑞萨
22+
TO-263
20000
保证原装正品,假一陪十
询价
NEC
23+
TO-252
10000
公司只做原装正品
询价
RENESAS/瑞萨
23+
TO-263
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
2022
TO-263
80000
原装现货,OEM渠道,欢迎咨询
询价
更多NP83P04PDG供应商 更新时间2024-6-5 15:30:00