首页 >NP83P06PDG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP83P06PDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=−10V,ID=−41.5A) RDS(on)2=12mΩMAX.(VGS=−4.5V,ID=−41.5A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP83P06PDG | -60V – -83A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=8.8mMax.(VGS=-10V,ID=-41.5A) RDS(on)=12mMax.(VGS=-4.5V,ID=-41.5A) Lowinputcapacitance:Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=−10V,ID=−41.5A) RDS(on)2=12mΩMAX.(VGS=−4.5V,ID=−41.5A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
-60V – -83A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=8.8mMax.(VGS=-10V,ID=-41.5A) RDS(on)=12mMax.(VGS=-4.5V,ID=-41.5A) Lowinputcapacitance:Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=−10V,ID=−41.5A) RDS(on)2=12mΩMAX.(VGS=−4.5V,ID=−41.5A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHING P-CHANNEL POWER MOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING P-CHANNEL POWER MOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING P-CHANNEL POWER MOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP83P06PDG
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
08+(pbfree) |
TO-252 |
8866 |
询价 | |||
Renesas |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
6000 |
面议 |
19 |
TO-252 |
询价 | ||
NEC |
2020+ |
TO-263 |
32630 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT-323 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
300 |
国产品牌isc,可替代原装 |
询价 |
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