| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Fieldreplaceablebearingsandelectronics | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
AluminumorLexancupsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
EFD20HIGHFREQUENCYPoETRANSFORMER | ALLIED Allied Components International | ALLIED | ||
Implement3.3VdualusingAIC1730 | AIC AIC | AIC | ||
PolySwitchResettableDevices | MACOM Tyco Electronics | MACOM | ||
LowOn-Resistance | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
07+ |
TO251 |
80480 |
询价 | |||
SAMSUNG |
05+ |
原厂原装 |
3671 |
只做全新原装真实现货供应 |
询价 | ||
IR |
21+ROHS |
252-251 |
988888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
22+ |
252-251 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
252-251 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-251 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IR/VISHAY |
22+ |
SOT-251 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
IR |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
2122+ |
TO-252 |
29860 |
全新原装正品,价格优势一片起售,可做含税 |
询价 | ||
IOR |
22+ |
TO-251 |
2987 |
绝对全新原装现货供应! |
询价 |
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