IRFU420资料datasheet下载批发供应瑞萨电子-114ic电子网

首页 >IRFU420>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFU420	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU420	文件：316.33 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=2.4A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=3.0Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFU420	文件：1.24746 Mbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技	Vishay
IRFU420	文件：170.89 Kbytes Page：6 Pages	Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A) Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU420	文件：55.18 Kbytes Page：7 Pages	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs 2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRFU420	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFU420	文件：4.40019 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU420	文件：4.27854 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU420A	文件：267.93 Kbytes Page：13 Pages	Power MOSFET FEATURES •LowgateChargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.	VishayVishay Siliconix 威世科技	Vishay
IRFU420A	文件：114.51 Kbytes Page：10 Pages	SMPS MOSFET HEXFET®PowerMOSFET Applications •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterize	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU420A	文件：167.69 Kbytes Page：8 Pages	Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)	VishayVishay Siliconix 威世科技	Vishay
IRFU420A	文件：2.68526 Mbytes Page：7 Pages	Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU420APBF	文件：167.69 Kbytes Page：8 Pages	Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)	VishayVishay Siliconix 威世科技	Vishay
IRFU420APBF	文件：225.03 Kbytes Page：10 Pages	HEXFET Power MOSFET ( VDSS = 500V , RDS(on) max = 3.0廓 , ID = 3.3A ) SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCOSSspecified(SeeAN1001) Applications •SwitchModePowerSupply(SMPS)	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU420APBF	文件：2.68526 Mbytes Page：7 Pages	Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU420B	文件：649.04 Kbytes Page：9 Pages	500V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFU420B	文件：654.52 Kbytes Page：9 Pages	500V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFU420PBF	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFU420PBF	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU420PBF	文件：4.40019 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

12 >>>

详细参数

型号：
IRFU420
功能描述：
MOSFET N-Chan 500V 2.4 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	IRFU420	INTERLS	2024+实力库存	TO-251	1500	只做原厂渠道可追溯货源	询价
深圳市宝隆宏业科技有限公司	IRFU420	IR	2122+	TO-251	11980	只做原装进口正品,假一赔十,价格优势	询价
深圳市科恒伟业电子有限公司	IRFU420	IR	22+	TO-251	7500	只做原装正品假一赔十!正规渠道订货!	询价
深圳市科翼源电子有限公司	IRFU420	IR	23+	TO-251	3400	原厂原装正品	询价
深圳市星佑电子有限公司	IRFU420	IR	06+	TO-251	12000	原装	询价
深圳市昌和盛利电子有限公司	IRFU420	IR	23+	TO-251	35890		询价
深圳好佳好科技有限公司	IRFU420	IR	1305+	TO-251	12000	公司特价原装现货	询价
深圳市莱克讯科技有限公司	IRFU420	IR	2017+	TO-251-3	28659	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
齐创科技(上海,北京,青岛)有限公司	IRFU420	VIS	23+	TO-251	10000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	IRFU420	IR	16+	原厂封装	154	原装现货假一罚十	询价

更多IRFU420供应商更新时间2024-5-16 16:36:00

详细参数

相关规格书

相关库存