60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

文件：247.48 Kbytes 页数：9 Pages

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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

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60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

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丝印：ZXMS6006D；Package：SOT223；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Description The ZXMS6006DGQ-13 is a self protected low side IntelliFET TM MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DGQ-13 is ideal as a general purpose switch driven from 3

文件：789 Kbytes 页数：8 Pages

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丝印：ZXMS6006D；Package：SOT223；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

文件：350.42 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

文件：350.42 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

文件：247.48 Kbytes 页数：9 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

The ZXMS6006DG is N channel enhancement mode self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality and is ideally suited to general purpose switching, driven from 3.3V or 5V microco

Diodes

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

The ZXMS6006DGQ-13 is a self protected low side IntelliFET MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DGQ-13 is ideal as a general purpose switch driven from 3.3V or 5V microcontroll •Compact High Power Dissipation Package\n•Low Input Current\n•Logic Level Input (3.3V and 5V)\n•Short Circuit Protection with Auto Restart\n•Over Voltage Protection (Active Clamp)\n•Thermal Shutdown with Auto Restart\n•Over-Current Protection\n•Input Protection (ESD)\n•High Continuous Current Rating;

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美台半导体