丝印：ZXMS6006D；Package：SOT223；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Description The ZXMS6006DGQ-13 is a self protected low side IntelliFET TM MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DGQ-13 is ideal as a general purpose switch driven from 3

文件：789 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：ZXMS6006D；Package：SOT223；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：ZXMS6006D；Package：SOT223；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Description The ZXMS6006DGQ-13 is a self protected low side IntelliFET TM MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DGQ-13 is ideal as a general purpose switch driven from 3

文件：789 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：ZXMS6006D；Package：SOT223；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Cont

文件：605.56 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

文件：247.48 Kbytes 页数：9 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

文件：350.42 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

文件：350.42 Kbytes 页数：8 Pages

DIODES

美台半导体

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

文件：247.48 Kbytes 页数：9 Pages

DIODES

美台半导体