60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

The ZXMS6006DGQ is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DGQ is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh env •Compact High Power Dissipation Package\n•Logic Level Input (3.3V and 5V)\n•Over Voltage Protection (active clamp)\n•Over-Current Protection\n•High Continuous Current Rating\n•Halogen and Antimony Free. \"Green\" Device (Note 3)\n•PPAP Capable;

Diodes

美台半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：LOW SIDE INTELLIFET SOT223

DIODES

美台半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：LOW SIDE INTELLIFET SOT223 T\u0026R 1

DIODES

美台半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

DIODES

美台半导体