60V N-Channel Self-Protected Enhancement Mode IntelliFET MOSFET

The ZXMS6008N8 is a self-protected low-side IntelliFET? MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6008N8 is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in ha

Diodes

美台半导体

60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic-Level Input (3.3V and 5V)  Short-Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Contin

文件：748.26 Kbytes 页数：9 Pages

DIODES

美台半导体

丝印：6008N8；Package：SO-8；60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic-Level Input (3.3V and 5V)  Short-Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Contin

文件：748.26 Kbytes 页数：9 Pages

DIODES

美台半导体

60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODEIntelliFET® MOSFET

The DIODES™ ZXMS6008N8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6008N8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers

Diodes

美台半导体