60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Contin

文件：1.0715 Mbytes 页数：9 Pages

DIODES

美台半导体

丝印：1K8；Package：SOT23F；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Contin

文件：1.0715 Mbytes 页数：9 Pages

DIODES

美台半导体

IntelliFET

The DIODES™ ZXMS6008FF is a self-protected low-side IntelliFET® MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp), and ESD-protected logic level functionality. The ZXMS6008FF is ideal as a general purpose switch driven from 3.3V or 5V microcontroll

Diodes

美台半导体

IntelliFET

The DIODES™ ZXMS6008FFQ is a self-protected low-side IntelliFET® MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp), and ESD-protected logic level functionality. The ZXMS6008FFQ is ideal as a general purpose switch driven from 3.3V or 5V microcontro

Diodes

美台半导体