N-Channel Enhancement Mode Mosfet

文件：908.16 Kbytes 页数：11 Pages

YANGJIE

扬杰电子

N-Channel Enhancement Mode Mosfet

文件：908.16 Kbytes 页数：11 Pages

YANGJIE

扬杰电子

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

文件：142.66 Kbytes 页数：8 Pages

UTC

友顺

N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

文件：573.06 Kbytes 页数：5 Pages

ESTEK

伊泰克电子

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

文件：224.53 Kbytes 页数：6 Pages

UTC

友顺