30N06.

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

30N06B

25A竊?0VN-CHANNELMOSFET

30N06L

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

30N06L

N-Channel60-V(D-S)MOSFET

30N06L.

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100%RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter

30N06-Q

N-CHANNELPOWERMOSFET

30N06V-Q

N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR

DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,

ACMS30N06D-HF

MOSFET

Features -Superlowgatecharge. -AEC-Q101Qualified. -Advancedhighcelldensitytench technology. -ExcellentCdv/dteffectdecline.

ADM30N06E

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM30N06EusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

FQB30N06

60VN-ChannelMOSFET