N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies,

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UTC

友顺

60V, 30A N-CHANNEL  POWER MOSFET

The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient • RDS(ON) < 40mΩ@VGS = 10 V, ID=15A \n• Fast switching capability \n• Avalanche energy specified;

UTC

友顺

MOSFET

Features - Super low gate charge. - AEC-Q101 Qualified. - Advanced high cell density tench technology. - Excellent Cdv/ dt effect decline.

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COMCHIP

典琦

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM30N06E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：796.83 Kbytes 页数：6 Pages

ADV

爱德微

60V N-Channel MOSFET

文件：663.34 Kbytes 页数：9 Pages

Fairchild

仙童半导体