丝印：200N06D；Package：TO-252；MOSFET

Features - Super low gate charge. - AEC-Q101 Qualified. - Advanced high cell density tench technology. - Excellent Cdv/ dt effect decline.

文件：525.27 Kbytes 页数：6 Pages

COMCHIP

典琦

MOSFET

Comchip

典琦

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM30N06E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：796.83 Kbytes 页数：6 Pages

ADV

爱德微

60V N-Channel MOSFET

文件：663.34 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：368.29 Kbytes 页数：2 Pages

ISC

无锡固电