35.0-43.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT devi

文件：281.72 Kbytes 页数：7 Pages

MIMIX

35.0-43.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT devi

文件：281.72 Kbytes 页数：7 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

文件：242.87 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

文件：225.73 Kbytes 页数：8 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

文件：225.73 Kbytes 页数：8 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

文件：225.73 Kbytes 页数：8 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

11.0-16.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to

文件：160 Kbytes 页数：6 Pages

MIMIX