8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

文件：225.73 Kbytes 页数：8 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

11.0-16.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to

文件：160 Kbytes 页数：6 Pages

MIMIX

17.0-21.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

文件：145.4 Kbytes 页数：6 Pages

MIMIX

21.0-24.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

文件：170.32 Kbytes 页数：7 Pages

MIMIX

36.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to

文件：156.95 Kbytes 页数：6 Pages

MIMIX

36.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t

文件：156.51 Kbytes 页数：6 Pages

MIMIX

36.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t

文件：156.51 Kbytes 页数：6 Pages

MIMIX