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型号	下载订购	功能描述	制造商上传企业	LOGO
XP1005-BD-000V	文件：281.72 Kbytes Page：7 Pages	35.0-43.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT devi 文件：281.72 Kbytes 页数：7 Pages	MIMIX	MIMIX
XP1005-BD-EV1	文件：281.72 Kbytes Page：7 Pages	35.0-43.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT devi 文件：281.72 Kbytes 页数：7 Pages	MIMIX	MIMIX
XP1006	文件：242.87 Kbytes Page：6 Pages	8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base 文件：242.87 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1006-BD	文件：225.73 Kbytes Page：8 Pages	8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base 文件：225.73 Kbytes 页数：8 Pages	MIMIX	MIMIX
XP1006-BD-000V	文件：225.73 Kbytes Page：8 Pages	8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base 文件：225.73 Kbytes 页数：8 Pages	MIMIX	MIMIX
XP1006-BD-EV1	文件：225.73 Kbytes Page：8 Pages	8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base 文件：225.73 Kbytes 页数：8 Pages	MIMIX	MIMIX
XP1006-FA	文件：228.2 Kbytes Page：6 Pages	8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens 文件：228.2 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1006-FA-0N00	文件：228.2 Kbytes Page：6 Pages	8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens 文件：228.2 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1006-FA-EV1	文件：228.2 Kbytes Page：6 Pages	8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens 文件：228.2 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1008	文件：160 Kbytes Page：6 Pages	11.0-16.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to 文件：160 Kbytes 页数：6 Pages	MIMIX	MIMIX

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晶体管资料

型号：
XP1101
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-N/P+R
性质：
表面帖装型（SMD）_开关管（S）_差分放大器射极输
封装形式：
贴片封装
极限工作电压：
40V
最大电流允许值：
0.03A
最大工作频率：
<1MHZ或未知
引脚数：
5
可代换的型号：
最大耗散功率：
放大倍数：
图片代号：
H-21
vtest：
40
htest：
999900
atest：
0.03
wtest：
0

产品属性

产品编号：
XP1
制造商：
Advanced Energy
类别：
电源 - 外部/内部（板外） > 配件
系列：
powerMods
包装：
盒
配件类型：
并行输出链路
配套使用/相关产品：
powerMods
描述：
PARALLEL OUTPUT LINK FOR PWRMODS

供应商	型号	品牌	批号	封装	库存	备注	价格
上海金庆电子技术有限公司	XP1	ExcelsysTechnologies	新		247	全新原装货期两周	询价
上海市鑫鸿达电子	XP1	Excelsys Technologies	2022+		243	全新原装货期两周	询价
深圳市艾宇欣科技有限公司	XP1	Excelsys	2020+	N/A	1489	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市莱克讯科技有限公司	XP1C301	Panasonic	1923+	SOT-353	35689	绝对进口原装现货库存特价销售	询价
深圳市宇集芯电子有限公司	XP1035-QH-0G00	M/A-COM	25+	QFN	90000	一级代理商进口原装现货、价格合理	询价
深圳市河锋鑫科技有限公司	XP162A12A6PRG	Torex	22+	TO243AA	9000	原厂渠道,现货配单	询价
艾睿（深圳）半导体有限公司	XP132A11A1SR	VBsemi(台湾微碧)	2447	SO-8	105000	4000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市诚利顺电子科技有限公司	XP161A355PR	NEC	23+	1000	9000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市金芯世纪电子有限公司	XP1213-(TX)	PANASONIC/松下	22+	SOT-353	100000	代理渠道/只做原装/可含税	询价
深圳市勤思达科技有限公司	XP162A12A6PR	TPREX	24+	SOT89	5000	全新原装正品,现货销售	询价

更多XP1供应商更新时间2026-1-17 16:06:00

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