37.0-42.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to e

文件：358.62 Kbytes 页数：8 Pages

MIMIX

37.0-42.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to e

文件：358.62 Kbytes 页数：8 Pages

MIMIX

37.0-42.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to e

文件：358.62 Kbytes 页数：8 Pages

MIMIX

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free Description XP10A035 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficie

文件：672.35 Kbytes 页数：7 Pages

YAGEO

国巨

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free Description XP10A045 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficie

文件：733.02 Kbytes 页数：7 Pages

YAGEO

国巨

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Fast Switching Characteristic Low Gate Charge RoHS Compliant & Halogen-Free Description XP10A185 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with a

文件：250.41 Kbytes 页数：8 Pages

YAGEO

国巨

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS Compliant & Halogen-Free Description XP10C036L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer

文件：748.2 Kbytes 页数：12 Pages

YAGEO

国巨

2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Lower Gate Charge High-Efficiency Bridge Application RoHS Compliant & Halogen-Free Description XP10C072 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer

文件：845.25 Kbytes 页数：10 Pages

YAGEO

国巨

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS Compliant & Halogen-Free Description XP10C150 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer

文件：180.59 Kbytes 页数：10 Pages

YAGEO

国巨

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP10C150 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件：281.7 Kbytes 页数：12 Pages

YAGEO

国巨