37.0-42.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to e

文件：358.62 Kbytes 页数：8 Pages

MIMIX

37.0-42.0 GHz GaAs MMIC

文件：353.57 Kbytes 页数：8 Pages

MA-COM

37.0-42.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to e

文件：358.62 Kbytes 页数：8 Pages

MIMIX

37.0-42.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to e

文件：358.62 Kbytes 页数：8 Pages

MIMIX

Power Amplifier

文件：353.57 Kbytes 页数：8 Pages

MA-COM

Power Amplifier

MACOM's four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip h ·Excellent Transmit Output Stage\n·100% Visual Inspection to MIL-STD-883 Method 2010\n·100% On-Wafer RF, DC and Output Power Testing\n·+25.0 dBm P1dB Compression Point\n·26.0 dB Small Signal Gain\n·Output Power Adjust;

MACOM