XP1资料datasheet下载行情报价卓然第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
XP1009	文件：145.4 Kbytes Page：6 Pages	17.0-21.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en 文件：145.4 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1010	文件：170.32 Kbytes Page：7 Pages	21.0-24.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en 文件：170.32 Kbytes 页数：7 Pages	MIMIX	MIMIX
XP1011	文件：156.95 Kbytes Page：6 Pages	36.0-40.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to 文件：156.95 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1011-BD	文件：156.51 Kbytes Page：6 Pages	36.0-40.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t 文件：156.51 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1011-BD-000V	文件：156.51 Kbytes Page：6 Pages	36.0-40.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t 文件：156.51 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1011-BD-000W	文件：156.51 Kbytes Page：6 Pages	36.0-40.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t 文件：156.51 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1011-BD-EV1	文件：156.51 Kbytes Page：6 Pages	36.0-40.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t 文件：156.51 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1012	文件：158.51 Kbytes Page：6 Pages	37.0-40.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en 文件：158.51 Kbytes 页数：6 Pages	MIMIX	MIMIX
XP1013	文件：1.5436 Mbytes Page：7 Pages	17.0-26.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure 文件：1.5436 Mbytes 页数：7 Pages	MIMIX	MIMIX
XP1013-BD	文件：466.12 Kbytes Page：7 Pages	17.0-26.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure 文件：466.12 Kbytes 页数：7 Pages	MIMIX	MIMIX

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晶体管资料

型号：
XP1101
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-N/P+R
性质：
表面帖装型（SMD）_开关管（S）_差分放大器射极输
封装形式：
贴片封装
极限工作电压：
40V
最大电流允许值：
0.03A
最大工作频率：
<1MHZ或未知
引脚数：
5
可代换的型号：
最大耗散功率：
放大倍数：
图片代号：
H-21
vtest：
40
htest：
999900
atest：
0.03
wtest：
0

产品属性

产品编号：
XP1
制造商：
Advanced Energy
类别：
电源 - 外部/内部（板外） > 配件
系列：
powerMods
包装：
盒
配件类型：
并行输出链路
配套使用/相关产品：
powerMods
描述：
PARALLEL OUTPUT LINK FOR PWRMODS

供应商	型号	品牌	批号	封装	库存	备注	价格
上海金庆电子技术有限公司	XP1	ExcelsysTechnologies	新		247	全新原装货期两周	询价
上海市鑫鸿达电子	XP1	Excelsys Technologies	2022+		243	全新原装货期两周	询价
深圳市艾宇欣科技有限公司	XP1	Excelsys	2020+	N/A	1489	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市纳立科技有限公司	XP1073-BD	MIMIX	三年内		1983	只做原装正品	询价
瀚佳科技(深圳)有限公司	XP152A12COMR	TOREX	24+	SOT23	30980	原装现货/放心购买	询价
深圳市莱克讯科技有限公司	XP1C301	Panasonic	1923+	SOT-353	35689	绝对进口原装现货库存特价销售	询价
深圳市科芯源微电子有限公司	XP151A13AOMR	TOREX/特瑞仕	25+	SOT23	54648	百分百原装现货实单必成欢迎询价	询价
深圳市宇创芯科技有限公司	XP135A1145SR	TOREX/特瑞仕	24+	SOP8	9600	原装现货,优势供应,支持实单!	询价
深圳市宇集芯电子有限公司	XP1035-QH-0G00	M/A-COM	25+	QFN	90000	一级代理商进口原装现货、价格合理	询价
深圳市勤思达科技有限公司	XP152A12C0MR	TOREX	09+	SOT23-3	5500	原装无铅,优势热卖	询价

更多XP1供应商更新时间2026-1-17 16:06:00

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