36.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t

文件：156.51 Kbytes 页数：6 Pages

MIMIX

36.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography t

文件：156.51 Kbytes 页数：6 Pages

MIMIX

37.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

文件：158.51 Kbytes 页数：6 Pages

MIMIX

17.0-26.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

文件：1.5436 Mbytes 页数：7 Pages

MIMIX

17.0-26.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

文件：466.12 Kbytes 页数：7 Pages

MIMIX

17.0-26.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

文件：466.12 Kbytes 页数：7 Pages

MIMIX

17.0-26.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

文件：466.12 Kbytes 页数：7 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based up

文件：165.59 Kbytes 页数：5 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based up

文件：136.22 Kbytes 页数：5 Pages

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based up

文件：136.22 Kbytes 页数：5 Pages

MIMIX