XP1006-BD中文资料MIMIX数据手册PDF规格书

General Description

Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

特性 Features

➤ X-Band 10W Power Amplifier

➤ 21.0 dB Large Signal Gain

➤ +40.0 dBm Saturated Output Power

➤ 30 Power Added Efficiency

➤ On-chip Gate Bias Circuit

➤ 100 On-Wafer RF, DC and Output Power Testing

➤ 100 Visual Inspection to MIL-STD-883 Method 2010