8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

文件：228.2 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

文件：198.7 Kbytes 页数：6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description\nMimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure X-Band 10W Power Amplifier\nFlange Package\n21.5 dB Large Signal Gain\n+40.5 dBm Saturated Output Power\n37% Power Added Efficiency\n100% On-Wafer RF, DC and Output Power Testing;

MIMIX

SOT-89

TOREX

特瑞仕

上传：齐创科技(上海,北京,青岛)有限公司

SOT23-6

FM富满

上传：深圳广友电子有限公司