低功耗双存取同步动态随机存取内存

This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits\n Burst Type: Sequential or Interleave\n• PASR、ATCSR、Power Down Mode、DPD\n• Four internal banks for concurrent operation\n• Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver;

Winbond

华邦电子

低功耗双存取同步动态随机存取内存(Low Power DDR SDRAM)

This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits •Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V \n• Data width: x32 \n• Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz \n• Standard Self Refresh Mode \n• PASR、ATCSR、Power Down Mode、DPD \n• Programmable output buffer driver strength \n• Four internal banks for concurrent operation ;

Winbond

华邦电子

Package：90-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 90VFBGA

Winbond Electronics

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 90VFBGA

Winbond Electronics

Package：90-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 90VFBGA

Winbond Electronics