W958D6DBC

虚拟静态随机存取内存(Pseudo SRAM); •Supports asynchronous and burst operations \n• VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ \n• Random access time: 70ns \n• Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst \n• Burst wrap or sequential \n• Max clock rate: 133 MHz (tCLK = 7.5ns) \n• tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz \n• Low-power features: TCR, PAR, DPD \n• Page mode READ access:Sixteen-word page size \n• Interpage READ access: 70ns, Intrapage READ access: 20ns\n• Package:54VFBGA;

This is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.\n

W958D6DBCX7I-TR

256Mb Async./Burst/Sync./A/D MUX

W958D6DBCX7I

Package：54-VFBGA；包装：管件 类别：集成电路（IC） 存储器 描述：256MB PSRAM X16, ADM, 133MHZ, IN

ETC

W958D6DBCX7I TR

Package：54-VFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC PSRAM 256MBIT PAR 54VFBGA

ETC

W971GG6JB25I

华邦
BGA

华邦