Low-power features

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Low-power features

Winbond

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虚拟静态随机存取内存(Pseudo SRAM)

The is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. •Supports asynchronous, page, and burst operations \n• VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ \n• Random access time: 70ns \n• Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst \n• Burst wrap or sequential \n• Max clock rate: 133 MHz (tCLK = 7.5ns) \n• tACLK: 5;

Winbond

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BGA

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上传：深圳市羿芯诚电子有限公司

FBGA84

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上传：标准国际(香港)有限公司